Rouvière, J.-L. : rechercher sur Z-Library

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1

Improved precision in strain measurement using nanobeam electron diffraction

Béché, A., Rouvière, J. L., Clément, L., Hartmann, J. M.

Journal:

Applied Physics Letters

Année:

2009

Langue:

english

Fichier:

PDF, 412 KB

english, 2009

2

Comparison between electrical and optical global clock distributions for CMOS integrated circuits

Cassan, Eric, Marris, Delphine, Rouvière, Mathieu, Vivien, Laurent, Laval, Suzanne

Journal:

Optical Engineering

Année:

2005

Langue:

english

Fichier:

PDF, 654 KB

english, 2005

3

Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy

Cooper, David, Denneulin, Thibaud, Barnes, Jean-Paul, Hartmann, Jean-Michel, Hutin, Louis, Le Royer, Cyrille, Béché, Armand, Rouvière, Jean-Luc

Journal:

Journal of Applied Physics

Année:

2012

Langue:

english

Fichier:

PDF, 4.47 MB

english, 2012

4

Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strain evolution and phase separation

Korytov, M., Budagosky, J. A., Brault, J., Huault, T., Benaissa, M., Neisius, T., Rouvière, J.-L., Vennéguès, P.

Journal:

Journal of Applied Physics

Année:

2012

Langue:

english

Fichier:

PDF, 3.75 MB

english, 2012

5

Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study

Kim, Honggyu, Meng, Yifei, Rouviére, Jean-Luc, Isheim, Dieter, Seidman, David N., Zuo, Jian-Min

Journal:

Journal of Applied Physics

Année:

2013

Langue:

english

Fichier:

PDF, 3.96 MB

english, 2013

6

Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy

Cooper, David, Le Royer, Cyrille, Béché, Armand, Rouvière, Jean-Luc

Journal:

Applied Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 3.85 MB

english, 2012

7

Amphiphilic properties of a polymerized glycolipid surfactant

Boyer, Bernard, Durand, Sylvie, Lamaty, G�rard, Moussamou-Missima, Jean Marie, Pavia, Andr� A., Pucci, Bernard, Roque, Jean Pierre, Rouvi�re, Jacques

Journal:

Journal of the Chemical Society Perkin Transactions 2

Année:

1991

Langue:

english

Fichier:

PDF, 1016 KB

english, 1991

8

Epitaxial growth of germanium dots on Si(001) surface covered by a very thin silicon oxide layer

Barski, A., Derivaz, M., Rouvière, J. L., Buttard, D.

Journal:

Applied Physics Letters

Année:

2000

Langue:

english

Fichier:

PDF, 644 KB

english, 2000

9

Strain distribution in GaN∕AlN quantum-dot superlattices

Sarigiannidou, E., Monroy, E., Daudin, B., Rouvière, J. L., Andreev, A. D.

Journal:

Applied Physics Letters

Année:

2005

Langue:

english

Fichier:

PDF, 686 KB

english, 2005

10

The Importance of the Radial Growth in the Faceting of Silicon Nanowires

Oehler, F., Gentile, P., Baron, T., Ferret, P., Den Hertog, M., Rouvière, J.

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 4.02 MB

english, 2010

11

Fabrication of Well-Organized and Densely Packed Si Nanopillars Containing SiGe Nanodots by Using Block Copolymer Templates

Aissou, Karim, Baron, Thierry, Kogelschatz, Martin, Hertog, Martien Den, Rouvière, Jean Luc, Hartmann, Jean-Michel, Pélissier, Bernard

Journal:

Chemistry of Materials

Année:

2008

Langue:

english

Fichier:

PDF, 1.51 MB

english, 2008

12

Uptake of Ozone to Deliquesced KI and Mixed KI/NaCl Aerosol Particles

Rouvière, Aurélie, Sosedova, Yulia, Ammann, Markus

Journal:

Journal of Physical Chemistry A

Année:

2010

Langue:

english

Fichier:

PDF, 1.15 MB

english, 2010

13

Multiple Hydrogen-Bond-Assisted Self-Assembly of Semiconductor Nanocrystals on Silicon Surfaces and Nanowires

Huang, Kai, Renault, Olivier, Simonato, Jean-Pierre, Grévin, Benjamin, Rouvière, Emmanuelle, De Girolamo, Julia, Reiss, Peter, Demadrille, Renaud, Benmansour, Hadjar

Journal:

The Journal of Physical Chemistry C

Année:

2009

Langue:

english

Fichier:

PDF, 1.57 MB

english, 2009

14

Uptake of NO 2 to Deliquesced Dihydroxybenzoate Aerosol Particles

Sosedova, Yulia, Rouvière, Aurélie, Gäggeler, Heinz W., Ammann, Markus

Journal:

Journal of Physical Chemistry A

Année:

2009

Langue:

english

Fichier:

PDF, 1.05 MB

english, 2009

15

Controlled in Situ n-Doping of Silicon Nanowires during VLS Growth and Their Characterization by Scanning Spreading Resistance Microscopy

Celle, Caroline, Mouchet, Céline, Rouvière, Emmanuelle, Simonato, Jean-Pierre, Mariolle, Denis, Chevalier, Nicolas, Brioude, Arnaud

Journal:

The Journal of Physical Chemistry C

Année:

2010

Langue:

english

Fichier:

PDF, 3.67 MB

english, 2010

16

Preferential nucleation of GaN quantum dots at the edge of AlN threading dislocations

Rouvière, J. L., Simon, J., Pelekanos, N., Daudin, B., Feuillet, G.

Journal:

Applied Physics Letters

Année:

1999

Langue:

english

Fichier:

PDF, 601 KB

english, 1999

17

MRI Appearance of Prostate following Transrectal HIFU Ablation of Localized Cancer

Rouvi&egrave, re, Olivier, Lyonnet, Denis, Raudrant, Anne, Colin-Pangaud, Catherine, Chapelon, Jean Yves, Bouvier, Raymonde, Dubernard, Jean Michel, Gelet, Albert

Journal:

European Urology

Année:

2001

Langue:

english

Fichier:

PDF, 405 KB

english, 2001

18

Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN

Adelmann, C., Brault, J., Rouvière, J.-L., Mariette, H., Mula, Guido, Daudin, B.

Journal:

Journal of Applied Physics

Année:

2002

Langue:

english

Fichier:

PDF, 561 KB

english, 2002

19

Atomic layer epitaxy and molecular beam epitaxy of CdTe/MnTe superlattices: A structural and optical study

Hartmann, J. M., Kany, F., Charleux, M., Samson, Y., Rouvière, J. L., Mariette, H.

Journal:

Journal of Applied Physics

Année:

1998

Langue:

english

Fichier:

PDF, 1.65 MB

english, 1998

20

Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 μm operation

Rouvière, M., Vivien, L., Le Roux, X., Mangeney, J., Crozat, P., Hoarau, C., Cassan, E., Pascal, D., Laval, S., Fédéli, J.-M., Damlencourt, J.-F., Hartmann, J. M., Kolev, S.

Journal:

Applied Physics Letters

Année:

2005

Langue:

english

Fichier:

PDF, 392 KB

english, 2005

21

Visualization of Tm dopant atoms diffused out of GaN quantum dots

Okuno, H., Rouvière, J.-L., Jouneau, P.-H., Bayle-Guillemaud, P., Daudin, B.

Journal:

Applied Physics Letters

Année:

2010

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2010

22

Critical condition for growth of silicon nanowires

Dhalluin, Florian, Desré, Pierre J., den Hertog, Martien I., Rouvière, Jean-Luc, Ferret, Pierre, Gentile, Pascal, Baron, Thierry

Journal:

Journal of Applied Physics

Année:

2007

Langue:

english

Fichier:

PDF, 552 KB

english, 2007

23

Linear alignment of GaN quantum dots on AlN grown on vicinal SiC substrates

J. Brault, S. Tanaka, E. Sarigiannidou, J. Rouvière, B. Daudin, G. Feuillet, H. Nakagawa

Année:

2003

Langue:

english

Fichier:

PDF, 405 KB

english, 2003

24

Control of the morphology transition for the growth of cubic GaN/AlN nanostructures

Martinez-Guerrero, E., Chabuel, F., Daudin, B., Rouvière, J. L., Mariette, H.

Journal:

Applied Physics Letters

Année:

2002

Langue:

english

Fichier:

PDF, 594 KB

english, 2002

25

Ultralow loss successive divisions using silicon-on-insulator microwaveguides

Marris, D., Vivien, L., Pascal, D., Rouvière, M., Cassan, E., Lupu, A., Laval, S., Fédéli, J. M., El Melhaoui, L.

Journal:

Applied Physics Letters

Année:

2005

Langue:

english

Fichier:

PDF, 358 KB

english, 2005

26

Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy

Arlery, M., Rouvière, J. L., Widmann, F., Daudin, B., Feuillet, G., Mariette, H.

Journal:

Applied Physics Letters

Année:

1999

Langue:

english

Fichier:

PDF, 653 KB

english, 1999

27

[IET 2010 Forum on Specification & Design Languages (FDL 2010) - Southampton, UK (14-16 Sept. 2010)] 2010 Forum on Specification & Design Languages (FDL 2010) - VHDL-AMS model of RF-interconnect system for global on-chip communication

Rouvière, M., Bourdel, E., Quintanel, S., Granado, B.

Année:

2010

Fichier:

PDF, 318 KB

2010

28

Ordered growth of germanium hut islands on Si (001) molecular bonded substrates

V. Poydenot, R. Dujardin, J. L. Rouvière, A. Barski, F. Fournel

Année:

2004

Langue:

english

Fichier:

PDF, 479 KB

english, 2004

29

Zero-dimensional excitons in CdTe/ZnTe nanostructures

Marsal, L., Besombes, L., Tinjod, F., Kheng, K., Wasiela, A., Gilles, B., Rouvière, J.-L., Mariette, H.

Journal:

Journal of Applied Physics

Année:

2002

Langue:

english

Fichier:

PDF, 727 KB

english, 2002

30

Quantitative interfacial profiles in CdTe/Mn(Mg)Te heterostructures

Charleux, M., Rouvière, J. L., Hartmann, J. M., Bourret, A.

Journal:

Journal of Applied Physics

Année:

1998

Langue:

english

Fichier:

PDF, 2.16 MB

english, 1998

31

Nanoscale surface clustering on CdTe epilayers

Marsal, L., Mariette, H., Samson, Y., Rouvière, J. L., Picard, E.

Journal:

Applied Physics Letters

Année:

1998

Langue:

english

Fichier:

PDF, 628 KB

english, 1998

32

X-ray analysis of temperature induced defect structures in boron implanted silicon

Sztucki, M., Metzger, T. H., Kegel, I., Tilke, A., Rouvière, J. L., Lübbert, D., Arthur, J., Patel, J. R.

Journal:

Journal of Applied Physics

Année:

2002

Langue:

english

Fichier:

PDF, 1.05 MB

english, 2002

33

Improved quality GaN grown by molecular beam epitaxy using In as a surfactant

Widmann, F., Daudin, B., Feuillet, G., Pelekanos, N., Rouvière, J. L.

Journal:

Applied Physics Letters

Année:

1998

Langue:

english

Fichier:

PDF, 499 KB

english, 1998

34

Strain evolution during the silicidation of nanometer-scale SiGe semiconductor devices studied by dark field electron holography

Cooper, David, Béché, Armand, Hartmann, Jean-Michel, Carron, Véronique, Rouvière, Jean-Luc

Journal:

Applied Physics Letters

Année:

2010

Langue:

english

Fichier:

PDF, 605 KB

english, 2010

35

Growth kinetics and optical properties of self-organized GaN quantum dots

Widmann, F., Daudin, B., Feuillet, G., Samson, Y., Rouvière, J. L., Pelekanos, N.

Journal:

Journal of Applied Physics

Année:

1998

Langue:

english

Fichier:

PDF, 985 KB

english, 1998

36

Thermal exchange radius measurement: Application to nanowire thermal imaging

Puyoo, Etienne, Grauby, Stéphane, Rampnoux, Jean-Michel, Rouvière, Emmanuelle, Dilhaire, Stefan

Journal:

Review of Scientific Instruments

Année:

2010

Langue:

english

Fichier:

PDF, 646 KB

english, 2010

37

Stability of interfacial dislocations in (001) silicon surfacial grain boundaries

Rousseau, K., Rouvière, J. L., Fournel, F., Moriceau, H.

Journal:

Applied Physics Letters

Année:

2002

Langue:

english

Fichier:

PDF, 622 KB

english, 2002

38

Effects of p-doping on the thermal sensitivity of individual Si nanowires

Brioude, A., Cornu, D., Miele, P., Mouchet, C., Simonato, J.-P, Rouvière, E.

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 379 KB

english, 2008

39

Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations

Clément, L., Pantel, R., Kwakman, L. F. Tz., Rouvière, J. L.

Journal:

Applied Physics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 447 KB

english, 2004

40

Growth of CdTe/MnTe tilted and serpentine lattices on vicinal surfaces

Hartmann, J. M., Charleux, M., Rouvière, J. L., Mariette, H.

Journal:

Applied Physics Letters

Année:

1997

Langue:

english

Fichier:

PDF, 452 KB

english, 1997

41

Metal-semiconductor-metal Ge photodetectors integrated in silicon waveguides

Vivien, Laurent, Marris-Morini, Delphine, Fédéli, Jean-Marc, Rouvière, Mathieu, Damlencourt, Jean-François, El Melhaoui, Loubna, Le Roux, Xavier, Crozat, Paul, Mangeney, Juliette, Cassan, Eric, La

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 666 KB

english, 2008

42

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Germanium Photodetectors for Photonics on CMOS

Fedeli, Jean-Marc, Damlencourt, Jean-François, El Melhaoui, Loubna, Le Cunff, Yves, Mazzochi, Vincent, Vivien, Laurent, Marris Morini, Delphine, Rouvière, Mathieu, Pascal, Daniel, Le Roux, Xavier, C

Année:

2006

Langue:

english

Fichier:

PDF, 1.73 MB

english, 2006

43

[AIP BEAM INSTRUMENTATION WORKSHOP 2006: Twelfth Beam Instrumentation Workshop - Batavia, Illinois (USA) (1-4 May 2006)] AIP Conference Proceedings - High Resolution BPM for Linear Colliders

Simon, C., Chel, S., Luong, M., Napoly, O., Novo, J., Roudier, D., Baboi, N., Noelle, D., Mildner, N., Zapfe, K., Rouvière, N.

Année:

2006

Langue:

english

Fichier:

PDF, 373 KB

english, 2006

44

AIP Conference Proceedings [AIP FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2011 - Grenoble (France) (23–26 May 2011)] - Measurement of Nanograin Orientations: Application to Cu Interconnects

Brunetti, G., Galand, R., Rouvière, J. L., Clément, L., Cayron, C., Rauch, E. F., Robert, D., Martin, J. F., Bertin, F., Chabli, A., Seiler, David G., Diebold, Alain C., McDonald, Robert, Chabli, Am

Année:

2011

Langue:

english

Fichier:

PDF, 1.47 MB

english, 2011

45

AIP Conference Proceedings [AIP FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2011 - Grenoble (France) (23–26 May 2011)] - Annealed Si∕SiGeC Superlattices Studied by Dark-Field Electron Holography, ToF-SIMS and Infrared Spectroscopy

Denneulin, T., Rouvière, J. L., Béché, A., Py, M., Barnes, J. P., Rochat, N., Hartmann, J. M., Cooper, D., Seiler, David G., Diebold, Alain C., McDonald, Robert, Chabli, Amal, Secula, Erik M.

Année:

2011

Langue:

english

Fichier:

PDF, 444 KB

english, 2011

46

Erratum: “X-ray analysis of temperature induced defect structures in boron implanted silicon” [J. Appl. Phys. 92, 3694 (2002)]

M. Sztucki, T. H. Metzger, I. Kegel, A. Tilke, J. L. Rouvière, D. Lübbert, J. Arthur, J. R. Patel

Année:

2003

Langue:

english

Fichier:

PDF, 380 KB

english, 2003

47

AIP Conference Proceedings [AIP FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2011 - Grenoble (France) (23–26 May 2011)] - Field Mapping Of Semiconductors In A State-Of-The-Art Electron Microscope

Cooper, David, Béché, Armand, Rouvière, Jean-Luc, Servanton, Germain, Pantel, Roland, Morin, Pierre, Chabli, Amal, Seiler, David G., Diebold, Alain C., McDonald, Robert, Chabli, Amal, Secula, Erik

Année:

2011

Langue:

english

Fichier:

PDF, 2.76 MB

english, 2011

48

Severe Bleeding after Nephrolithotomy: Results of Hyperselective Embolization

Martin, X., Murat, F.-J., Feitosa, L.C., Rouvi&egrave, re, O., Lyonnet, D., Gelet, A., Dubernard, J.-M.

Journal:

European Urology

Année:

2000

Langue:

english

Fichier:

PDF, 208 KB

english, 2000

49

Spontaneous Carotid Artery Dissection in Two Siblings with Osteogenesis imperfecta

Rouvi&egrave, re, S., Michelini, R., Sarda, P., Pag&egrave, s, M.

Journal:

Cerebrovascular Diseases

Année:

2004

Langue:

english

Fichier:

PDF, 95 KB

english, 2004

50

Piezoelectric Properties of GaN Self-Organized Quantum Dots

Daudin, B., Widmann, F., Simon, J., Feuillet, G., Rouvi&re, J. L., Pelekanos, N. T., Fishman, G.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.24 MB

english, 1998